rsr020n06 range of storage temperature t stg - 55 to + 150 c p d *4 0.54 w power dissipation junction temperature t j 150 c gate - source voltage v gss ? 20 v p d *3 1.0 w continuous drain current i d *1 ? 2 a pulsed drain current i d,pulse *2 ? 8 a drain - source voltage v dss 60 v taping code tl marking pz l absolute maximum ratings (t a = 25c) parameter symbol value unit l packaging specifications type packaging taping l application reel size (mm) 180 dc/dc converters tape width (mm) 8 basic ordering unit (pcs) 3,000 l features l inner circuit 1) low on - resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt3). 4) pb-free lead plating ; rohs compliant l outline v dss 60v r ds(on) (max.) 170m w i d 2a p d 1.0w tsmt3 (1) (2) (3) (1) gate (2) source (3) drain * 1 esd protection diode * 2 body diode product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 3 dat asheet www.rohm.com ? 2012 rohm co., ltd. all rights reserved.
*1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 mounted on a ceramic board (30300.8mm) *4 mounted on a fr4 (12200.8mm) l thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *4 - - 231 c/w thermal resistance, junction - ambient r thja *3 - - 125 c/w l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. v breakdown voltage temperature coefficient v (br)dss t j i d = 1ma referenced to 25c - 67 - mv/c drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 60 - - m a gate - source leakage current i gss v gs = ? 20v, v ds = 0v - - ? 10 m a zero gate voltage drain current i dss v ds = 60v, v gs = 0v - - 1 v gate threshold voltage temperature coefficient v (gs)th t j i d = 1ma referenced to 25c - - 4.4 - mv/c gate threshold voltage v gs (th) v ds = 10v, i d = 1ma 1.0 - 2.5 static drain - source on - state resistance r ds(on) *5 v gs =10v, i d =2a - 120 170 - 220 310 m w v gs =4.5v, i d =2a - 140 195 v gs =4.0v, i d =2a - 150 210 v gs =10v, i d =2a, t j =125c w transconductance g fs *5 v ds = 10v, i d = 2a 1.3 3.0 - s gate input resistannce r g f = 1mhz, open drain - 3.0 - rsr020n06 product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 3 www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
*5 pulsed l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. pf output capacitance c oss v ds = 10v - 50 - reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v - 180 - - 22 - turn - on delay time t d(on) *5 v dd ? 30v, v gs = 10v - 6 - ns rise time t r *5 i d = 1.0a - 10 - turn - off delay time t d(off) *5 r l = 30 w - 20 - fall time t f *5 r g = 10 w - 6 - l gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. nc v dd ? 30v, i d = 2a v gs = 10v - 4.9 - gate - source charge q gs *5 v dd ? 30v, i d = 2a v gs = 5v v dd ? 30v, i d = 2a v gs = 5v - 2.7 - typ. max. - 1.0 - gate - drain charge q gd *5 - 0.6 - total gate charge q g *5 a forward voltage v sd *5 v gs = 0v, i s = 2a - - 1.2 v inverse diode continuous, forward current i s *1 t a = 25c - - 0.8 l body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. rsr020n06 product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 3 of 3 www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
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